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1N4448HWS
Document number: DS30196 Rev. 12 - 2
2 of 4
www.diodes.com
September 2013
? Diodes Incorporated
1N4448HWS
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
VBR(R)
80
?
V
IR
= 100
?A
Forward Voltage
VFM
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Peak Reverse Current (Note 6)
IRM
?
100
50
30
25
nA
μA
μA
nA
VR
= 80V
VR
= 75V, T
J
= +150°C
VR
= 25V, T
J
= +150°C
VR
= 20V
Total Capacitance
CT
?
3.5
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0
ns
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
?
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
100
300
02550
75 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE ( C)A
°
Fig. 1 Power Derating Curve
200
175
Note 5
0.1
0 200 400 600 800 1000 1200 1400 1600
1
10
100
1000
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T = 85°CA
T = 125°CA
T = 150°CA
T = -55°CA
T = 25°CA
0.10
1.0
10.0
0.01
0.001
0
20
40 60 80
V , INSTANTANEOUS REVERSE VOLTAGE (V)R
Fig. 3 Typical Reverse Characteristics
T = 100 CA
°
T = 0CA
°
T = 75CA
°
T = 50CA
°
T = 25CA
°
T = -30CA
°
I , INSTANTANEOUS REVERSE CURRENT ( A)
R
?
0
0416253
V , DC REVERSE VOLTAGE (V)R
Fig. 4 Total Capacitance vs. Reverse Voltage
C
, T
O
TAL
C
A
P
A
C
ITAN
C
E (pF)
T
1
2
3
4
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